16M-BIT ( 1Mbit ×16 / 2Mbit ×8 ) Boot Block Flash MEMORY

■ Low Voltage Operation
   VCC=VCCW=2.7V-3.6V Single Voltage
■ User-Configurable ×8 or ×16 Operation
■ High-Performance Read Access Time
   90ns(VCC=2.7V-3.6V)
■ Operating Temperature
   0°C to +70°C
■ Low Power Management
   Typ. 2µA (VCC=3.0V) Standby Current
   Automatic Power Savings Mode Decreases ICCR in
      Static Mode
   Typ. 120µA (VCC=3.0V, TA=+25°C, f=32kHz)
      Read Current
■ Optimized Array Blocking Architecture
   Two 4K-word (8K-byte) Boot Blocks
   Six 4K-word (8K-byte) Parameter Blocks
   Thirty-one 32K-word (64K-byte) Main Blocks
   Bottom Boot Location
■ Extended Cycling Capability
   Minimum 100,000 Block Erase Cycles
■ Enhanced Automated Suspend Options
   Word/Byte Write Suspend to Read
   Block Erase Suspend to Word/Byte Write
   Block Erase Suspend to Read
■ Enhanced Data Protection Features
   Absolute Protection with VCCW≤VCCWLK
   Block Erase, Full Chip Erase, Word/Byte Write and
      Lock-Bit Configuration Lockout during Power
      Transitions
   Block Locking with Command and WP#
   Permanent Locking
■ Automated Block Erase, Full Chip Erase,
   Word/Byte Write and Lock-Bit Configuration
      Command User Interface (CUI)
      Status Register (SR)
■ SRAM-Compatible Write Interface
■ Industry-Standard Packaging
   48-Lead TSOP
■ ETOXTM* Nonvolatile Flash Technology
■ CMOS Process (P-type silicon substrate)
■ Not designed or rated as radiation hardened