DESCRIPTION
The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• IS-95 CDMA: 865-895 MHz / 28 V
    POUT = 25 W
    EFF. = 29 %
• EDGE: 920-960 MHz / 28 V
    POUT = 45 W
    EFF. = 38 %
• GSM: 920-960 MHz / 28 V
    POUT = 135 W
    EFF. = 51 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION