Mid-Infrared Light Emitting Diode

Light Emitting Diodes with central wavelength 3.90 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.
LED39-PR has a stable ouput power and a lifetime more then 80000 hours.

Specifications
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.90 µm
• Optical Output Power: typ. 20 µW qCW
• Package: TO-18
   with PR and without window