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KM732V596A データシート - Samsung

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部品番号
KM732V596A

コンポーネント説明

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Samsung
Samsung Samsung

32Kx32-Bit Synchronous Pipelined Burst SRAM

GENERAL DESCRIPTION
The KM732V596A/L is a 1,048,576 bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based Mobile System.
The KM732V596A/L is fabricated using SAMSUNG¢s high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce.


FEATURES
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Write Self-Timed Cycle.
• On-Chip Address and Control Registers.
• VDD=3.3V-5%/+10% Power Supply for 3.3V I/O.
• VDD=3.3V±5% Power Supply for 2.5V I/O.
• I/O Supply Voltage : 3.3V-5%/+10% for 3.3V I/O or 2.5V+0.4V/-0.13V for 2.5V I/O
• 5V Tolerant Inputs except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention ; 2cycle Enable, 1cycle Disable.
• TTL-Level Three-State Output.
• 100-TOFP-1420A

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部品番号
コンポーネント説明
PDF
メーカー
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