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KM718V089 データシート - Samsung

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部品番号
KM718V089

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20 Pages

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418.8 kB

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Samsung
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GENERAL DESCRIPTION
The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.


FEATURES
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• VDD= 3.3V +0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V +0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention only for TQFP ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A / 119BGA(7x17 Ball Grid Array Package)

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