DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES
• Part Identification
    - KM416C4000B(5.0V, 8K Ref.)
    - KM416C4100B(5.0V, 4K Ref.)
• Active Power Dissipation
• Refresh Cycles
* Access mode & RAS only refresh mode : 8K cycle/64ms
    CAS-before-RAS & Hidden refresh mode : 4K cycle/64ms
• Performance Range
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply