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K6R1004C1B-8 データシート - Samsung

K6R1004C1B image

部品番号
K6R1004C1B-8

Other PDF
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page
8 Pages

File Size
121.5 kB

メーカー
Samsung
Samsung Samsung

GENERAL DESCRIPTION
The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAM SUNG¢s advanced CMOS process and designed for high speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1004C1B is packaged in a 400 mil 32-pin plastic SOJ.


FEATURES
• Fast Access Time 8,10,12ns(Max.)
• Low Power Dissipation
Standby (TTL) : 50mA(Max.)
          (CMOS) : 10mA(Max.)
Operating K6R1004C1B-8 : 150mA(Max.)
              K6R1004C1B-10 : 145mA(Max.)
              K6R1004C1B-12 : 140mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
   K6R1004C1B-J : 32-SOJ-400

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部品番号
コンポーネント説明
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