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K4B2G0846D-HYF8 データシート - Samsung

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K4B2G0846D-HYF8

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The 2Gb DDR3 SDRAM D-die is organized as a 64Mbit x 4 I/Os x 8banks, 32Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .

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