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K3160 データシート - Hitachi -> Renesas Electronics

K3160 image

部品番号
K3160

Other PDF
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page
9 Pages

File Size
50.5 kB

メーカー
Hitachi
Hitachi -> Renesas Electronics Hitachi

Features
1.  Low on-resistance RDS= 130 mΩtyp.
2.  High speed switching
3.  4 V gate drive device can be driven from 5 V source

K3160

Page Link's: 1  2  3  4  5  6  7  8  9 

部品番号
コンポーネント説明
PDF
メーカー
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics

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