DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
FEATURES
• High power gain:Gpe³8.4dB
@VDD=9.6V,f=450MHz,Pin=30dBm
• High efficiency:55% typ.
• Source case type seramic package
(connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.