K2057 データシート - Toshiba
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K2057
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Toshiba
Field Effect Transistor
Silicon N Channel MOS Type (π-MOS IV)
High Speed, High Current Switching Applications
FEATUREs
● Low Drain-Source ON Resistance
- RDS(ON) = 0.24Ω (Typ.)
● High Forward Transfer Amittnace
-|Yfs| = 15S (Typ.)
● Low Leakage Current
- IDSS = -100μA (Max.)(VDS = 500V)
● Enhancement-Mode
- Vth = 2.0 ~ 4.0V (VDS = -10V, ID = 1mA)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π −MOS IV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) ( Rev : 2008 )
Toshiba
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