DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a highgain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23Aand 4N24Acan be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.

FEATUREs:
• Collector is electrically isolated from the case.
• Overall current gain...1.5 typical (4N24A)
• Base lead provided for conventional transistor biasing
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation

APPLICATIONs:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control