High Current MegaMOS™ FET
N-Channel Enhancement Mode
FEATUREs
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times
APPLICATIONs
• Motor controls
• DC choppers
• Switched-mode power supplies
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density