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IXTH13N110 データシート - IXYS CORPORATION

IXTH13N110 image

部品番号
IXTH13N110

コンポーネント説明

Other PDF
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PDF
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page
2 Pages

File Size
44.8 kB

メーカー
IXYS
IXYS CORPORATION IXYS

MegaMOS™ FET
N-Channel Enhancement Mode


FEATUREs
• International standard package JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Fast switching times


APPLICATIONs
• Switch-mode and resonant-mode power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers

Advantages
• Easy to mount with 1 screw (isolated mounting screw hole)
• Space savings
• High power density

Page Link's: 1  2 

部品番号
コンポーネント説明
PDF
メーカー
MOS FET
Sanken Electric co.,ltd.
MOS FET
Sanken Electric co.,ltd.
GaAs FET
Siemens AG
MOS FET
Sanken Electric co.,ltd.
GaAs FET
Siemens AG
GaAs FET
Siemens AG
GaAs FET ( Rev : 2000 )
Infineon Technologies
GaAs FET
Siemens AG
GaAs FET
Siemens AG
FET Transistor
ON Semiconductor

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