High Voltage IGBT with Diode (Electrically Isolated Back Surface)

FEATUREs
• Silicon chip on DCB substrate
    - High power dissipation
    - Isolated mounting surface
    - 2500V electrical isolation
• IGBT and anti-parallel FRED for resonant power supplies
    - Induction heating
    - Rice cookers
• MOS Gate turn-on
    - drive simplicity
• Fast Recovery Expitaxial Diode (FRED)
    - soft recovery with low IRM

Advantages
• Saves space (two devices in one package)
• Easy to mount
• Reduces assembly time and cost