HiPerFET Power MOSFETs

N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family

FEATUREs
• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220 designs
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
   - easy to drive and to protect
• Fast intrinsic Rectifier

APPLICATIONs
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays

Advantages
• High power, low profile package
• Space savings
• High power density