Description
   The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. Each of the two outputs can source and sink 2A of peak current while producing voltage rise and fall times of less than 10ns. The input of each driver is CMOS compatible, and is virtually immune to latch up. Proprietary circuitry eliminates cross conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the IXD_602 family ideal for high-frequency and high-power applications.

FEATUREs
• 2A Peak Source/Sink Drive Current
• Wide Operating Voltage Range: 4.5V to 35V
• -40°C to +125°C Extended Operating Temperature
   Range
• Logic Input Withstands Negative Swing of up to 5V
• Outputs May be Connected in Parallel for Higher
   Drive Current
• Matched Rise and Fall Times
• Low Propagation Delay Time
• Low 10A Supply Current
• Low Output Impedance

APPLICATIONs
• Efficient Power MOSFET and IGBT Switching
• Switch Mode Power Supplies
• Motor Controls
• DC to DC Converters
• Class-D Switching Amplifiers
• Pulse Transformer Driver