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IXBH42N170 データシート - IXYS CORPORATION

IXBH42N170 image

部品番号
IXBH42N170

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2 Pages

File Size
46.9 kB

メーカー
IXYS
IXYS CORPORATION IXYS

VCES = 1700 V
IC25 = 75 A
VCE(sat) = 3.3 V


FEATUREs
• High Blocking Voltage
• JEDEC TO-268 surface and JEDEC TO-247 AD
• Low conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Molding epoxies meet UL 94 V-0 flammability classification


APPLICATIONs
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• Capacitor discharge circuits

Advantages
• Lower conduction losses than MOSFETs
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)

Page Link's: 1  2 

部品番号
コンポーネント説明
PDF
メーカー
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IXYS CORPORATION
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
IXYS CORPORATION
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
IXYS CORPORATION
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
IXYS CORPORATION
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
IXYS CORPORATION

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