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ISL9R860P2 データシート - ON Semiconductor

R860P2 image

部品番号
ISL9R860P2

コンポーネント説明

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11 Pages

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855.1 kB

メーカー
ONSEMI
ON Semiconductor ONSEMI

Description
The ISL9R860P2, ISL9R860S3ST is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.


FEATUREs
• Stealth Recovery trr = 28 ns (@ IF = 8 A)
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant


APPLICATIONs
• SMPS FWD
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• Snubber Diode


部品番号
コンポーネント説明
PDF
メーカー
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