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Integrated Silicon Solution
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DESCRIPTION
TheISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
FEATURES
• High-speed access time: 55, 70, 100 ns
• CMOS low power operation
– 120 mW (typical) operating
– 6 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.7V-3.45V VCC power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm)
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Silicon Solution
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc
128K X 16 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
128K X 16 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Silicon Solution
ULTRA LOW POWER 128K x 8 CMOS STATIC RAM
Semiconductor Corporation
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Silicon Solution
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Silicon Solution