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IS61LV12816 データシート - Integrated Silicon Solution

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部品番号
IS61LV12816

Other PDF
  2003  

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11 Pages

File Size
69 kB

メーカー
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.


FEATURES
• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
• TTL and CMOS compatible interface levels
• Single 3.3V ± 10% power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available

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部品番号
コンポーネント説明
PDF
メーカー
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Silicon Solution
128K x 16 CMOS 3.3V Static RAM
Paradigm Technology
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 16 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution

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