DESCRIPTION
The ISSI IS61LF12832 and IS61LF12836 are high-speed synchronous static RAM designed to provide a burstable, high-performance memory for high speed networking and communication applications. It is organized as 131,072 words by 32 bits or 36 bits, fabricated with ISSIs advanced CMOS technology. The device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

FEATURES
• Fast access times: 7.5 ns and 8.5 ns
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data inputs and control signals
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and 119-pin PBGA package
• Single +3.3V +10%, –5% power supply
• Power-down snooze mode
• 2.5V I/O voltage
• Industrial temperature available