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IS42S32400E データシート - Integrated Silicon Solution

IS42S32400E image

部品番号
IS42S32400E

コンポーネント説明

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60 Pages

File Size
707.9 kB

メーカー
ISSI
Integrated Silicon Solution ISSI

OVERVIEW
ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.


FEATURES
•  Clock frequency: 166, 143, 133 MHz
•  Fully synchronous; all signals referenced to a positive clock edge
•  Internal bank for hiding row access/precharge
•  Single Power supply: 3.3V + 0.3V
•  LVTTL interface
•  Programmable burst length – (1, 2, 4, 8, full page)
•  Programmable burst sequence: Sequential/Interleave
•  Auto Refresh (CBR)
•  Self Refresh
•  4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
•  Random column address every clock cycle
•  Programmable CAS latency (2, 3 clocks)
•  Burst read/write and burst read/single write operations capability
•  Burst termination by burst stop and precharge command

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

部品番号
コンポーネント説明
PDF
メーカー
128Mb Synchronous DRAM
Nanya Technology
4Banks x 4M x 16Bit Synchronous DRAM
Hynix Semiconductor
8Mx16 128Mb DDR Synchronous DRAM
Integrated Silicon Solution
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
Integrated Silicon Solution
4 Banks x 4M x 16Bit Synchronous DRAM
Hynix Semiconductor
4 Banks x 4M x 16Bit Synchronous DRAM
Hynix Semiconductor
4 Banks x 4M x 16Bit Synchronous DRAM
Hynix Semiconductor
4 Banks x 4M x 16Bit Synchronous DRAM
Hynix Semiconductor
4M x 16 DDR Synchronous DRAM (SDRAM)
Etron Technology
Synchronous DRAM 4M x 16 Bit x 4 Banks
A-Data Technology

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