DESCRIPTION
The IS25F011A, IS25F021A, and IS25F041A Serial Flash memories provide a storage solution for systems limited in power, pins, space, hardware, and firmware resources. They are ideal for applications that store voice, text, and data in a portable or mobile environment. Using ISSIs patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, and cost-effective nonvolatile memory solution.
FEATURES
• Flash Storage for Resource-Limited Systems
– Ideal for portable/mobile and microcontroller-based applications that store voice, text, and data
• NexFLASH TM Serial Flash Memory
– Patented single transistor EEPROM memory
– High-density, low-voltage/power, cost-effective
– Small 264-byte sectors
– 10K/100K write cycles, ten years data retention
• Ultra-low Power for Battery-Operation
– Single 5V or 3V supply for read and erase/write
– < 1 µA standby current, 5 mA active @ 3V (typical)
– Low frequency read command for very low power
– No pre-erase. Erase/Write time of 5 ms/sector @ 5V, ensures efficient battery use
• 4-pin SPI Serial Interface
– Easily interfaces to popular microcontrollers
– Clock operation as fast as 16 MHz
• On-chip Serial SRAM
– Dual 264-byte Read/Write SRAM buffers
– Use in conjunction with or independent of Flash
– Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
– Byte-level addressing
– Transfer or compare sector to SRAM
– Versatile hardware and software write-protection
– Alternate oscillator frequency for EMI sensitive applications.
– In-system electronic part number identification
– Removable Serial Flash Module package option
– SFK-SPI Serial Flash Development Kit