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IRG4PSC71UD データシート - International Rectifier

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IRG4PSC71UD

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IR
International Rectifier IR

UltraFast CoPack IGBT


FEATUREs
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
• IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations
• Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247
• Creepage distance increased to 5.35mm


Benefits
• Generation 4 IGBTs offer highest efficiencies available
• Maximum power density, twice the power handling of TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs
• Cost and space saving in designs that require multiple, paralleled IGBTs

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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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