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IRG4BC30WS データシート - International Rectifier

IRG4BC30W-S image

部品番号
IRG4BC30WS

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8 Pages

File Size
174.3 kB

メーカー
IR
International Rectifier IR

Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

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部品番号
コンポーネント説明
PDF
メーカー
Short Circuit Rated UltraFast IGBT VCES= 600V VCE(on) typ. =2.27V @VGE= 15V, IC= 9.0A
International Rectifier
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A ( Rev : 2016 )
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
Vishay Semiconductors
600V Insulated Gate Bipolar Transistor
Unspecified
20A, 600V Insulated Gate Bipolar Transistor
Unspecified
40A, 600V Insulated Gate Bipolar Transistor
Unspecified
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
Toshiba

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