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IRG4BC10UD データシート - International Rectifier

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IRG4BC10UD

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IR
International Rectifier IR

UltraFast CoPack IGBT
   
Features
• UltraFast: Optimized for high operating
    up to 80 kHz in hard switching, >200 kHz in
    resonant mode
• Generation 4 IGBT design provides tighter
    parameter distribution and higher efficiency than
    previous Generation
• IGBT co-packaged with HEXFREDTM ultrafast,
    ultra-soft-recovery anti-parallel diodes for use in
    bridge configurations
• Industry standard TO-220AB package
   
Benefits
• Generation 4 IGBTs offer highest efficiencies
    available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
    IGBTs . Minimized recovery characteristics require
        less/no snubbing
   

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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