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IRFU9220 データシート - International Rectifier

IRFR9220 image

部品番号
IRFU9220

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6 Pages

File Size
168.3 kB

メーカー
IR
International Rectifier IR

DESCRIPTION
The HEXFE technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.


FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9220)
• Straight Lead (IRFUFU9220)
• Available in Tape & Reel
• P-Channel
• Fast Switching

Page Link's: 1  2  3  4  5  6 

部品番号
コンポーネント説明
PDF
メーカー
HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ω, ID = 2.6A
International Rectifier
HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 20A
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
International Rectifier
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)
Vishay Semiconductors
HEXFET Power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ω, ID = -1.9A
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
International Rectifier

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