VDSS = -55V
RDS(on) = 0.11Ω
ID = -18A

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR5505)
Straight Lead (IRFU5505)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated