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International Rectifier
DESCRIPTION
Third Gneration MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications.
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9110/SiHFR9110)
• Straight Lead (IRFU9110/SiHFU9110)
• Available in Tape and Reel
• P-Channel
• Fast Switching
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
International Rectifier
Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A)
International Rectifier
HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
International Rectifier
HEXFET Power MOSFET(VDSS= 40V RDS(on)= 3.7mΩ ID= 75A)
International Rectifier
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
International Rectifier
HEXFET Power MOSFET Vdss=-55V, Rds(on)=0.06ohm,Id=-31A
International Rectifier
HEXFET® Power MOSFET (Vdss=400V/ Rds(on)=0.55Ω / Id=5.4A)
International Rectifier
HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ω, ID = 2.6A
International Rectifier