IRFP254 データシート - International Rectifier
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IRFP254
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International Rectifier
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
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HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 0.075 Ohm, ID = 38 A
International Rectifier
HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A
International Rectifier
HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.078 Ohm, ID = 47 A
International Rectifier
HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.85 Ohm, ID = 8.8 A
International Rectifier
HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.135 Ohm, ID = 32 A
International Rectifier
HEXFET power MOSFET. VDSS = -200 V, RDS(on) = 0.50 Ohm, ID = -12 A
International Rectifier
HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A
International Rectifier
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A
International Rectifier
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