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IRFIBE30GPBF データシート - Vishay Semiconductors

IRFIBE30G image

部品番号
IRFIBE30GPBF

コンポーネント説明

Other PDF
  2021  

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page
7 Pages

File Size
1.4 MB

メーカー
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsinkusing a single clip or by a single screw fixing.


FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS(t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available


部品番号
コンポーネント説明
PDF
メーカー
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