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IRFD1Z0 データシート - Intersil

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IRFD1Z0

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Intersil
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These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits. Formerly developmental type TA17451.

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0.6A and 0.45A, 150V and 200V, 1.5 and 2.4 OHM, N-Channel Power MOSFETs
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New Jersey Semiconductor
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4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
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2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
Intersil
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
New Jersey Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Intersil

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