IRFB23N15 データシート - International Rectifier
部品番号
IRFB23N15
Other PDF
no available.
PDF
page
11 Pages
File Size
135.7 kB
メーカー
International Rectifier
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
APPLICATIONs
High frequency DC-DC converters
部品番号
コンポーネント説明
PDF
メーカー
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
International Rectifier
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
International Rectifier
HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A
International Rectifier
Share Link: