Description
The IRF9150 and IRF9151 are advanced power MOSFETs designed, tested,and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers,relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.
The P-channel IRF9150 is an approximate electrical complement to the N-channel IRF9150.
The IRF types are supplied in the JEDEC TO-204AE metal package.

FEATUREs
• -25A, -60V and -100V
• rDS(ON) =  0.150Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance