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IRF7707 データシート - International Rectifier

IRF7707 image

部品番号
IRF7707

コンポーネント説明

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8 Pages

File Size
139.4 kB

メーカー
IR
International Rectifier IR

Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.

● Ultra Low On-Resistance
● P-Channel MOSFET
● Very Small SOIC Package
● Low Profile (< 1.2mm)
● Available in Tape & Reel

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部品番号
コンポーネント説明
PDF
メーカー
POWER MOS7® MOSFET
Advanced Power Technology
HEXFET®Power MOSFET
International Rectifier
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
New Jersey Semiconductor
HEXFET® Power MOSFET
Kersemi Electronic Co., Ltd.
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
International Rectifier

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