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IRF644NPBF(2003) データシート - International Rectifier

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部品番号
IRF644NPBF

コンポーネント説明

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12 Pages

File Size
261.4 kB

メーカー
IR
International Rectifier IR

Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free (only the TO-220AB
   version is currently available in a
   lead-free configuration)

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

部品番号
コンポーネント説明
PDF
メーカー
POWER MOS7® MOSFET
Advanced Power Technology
HEXFET®Power MOSFET
International Rectifier
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
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HEXFET® Power MOSFET
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HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
New Jersey Semiconductor
HEXFET® Power MOSFET
Kersemi Electronic Co., Ltd.
HEXFET® Power MOSFET
International Rectifier
HEXFET® Power MOSFET
International Rectifier

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