Description
Specifically designed for use in linear automotive applications this HEXFET Power MOSFET utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area (SOA) of the device.

FEATUREs
● Designed to support Linear Gate Drive Applications
● 175°C Operating Temperature
● Low Thermal Resistance Junction - Case
● Rugged Process Technology and Design
● Fully Avalanche Rated
● Lead-Free