• DESCRITION
• OR-ring and redundant power switches
• FEATURES
• Static drain-source on-resistance:
RDS(on)≤11.5mΩ
• Enhancement mode:
Vth =2.0 to 4.0 V (VDS=VGS, ID=270μ A)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation