IPD025N06N(2014) データシート - Infineon Technologies
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IPD025N06N
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12 Pages
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Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 60V
FEATUREs
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
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Metal Oxide Semiconductor Field Effect Transistor ( Rev : 2013 )
Infineon Technologies
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