IPC055N03L3X1SA1 データシート - Infineon Technologies
部品番号
IPC055N03L3X1SA1
コンポーネント説明
Other PDF
no available.
PDF
page
4 Pages
File Size
1.7 MB
メーカー
Infineon Technologies
Description
• N-channel enhancement mode
• For dynamic characterization refer to the datasheet of IPD031N03LG
• AQL0.65 for visual inspection according to failure catalogue
• Electrostatic Discharge Sensitive Device according to MIL-STD883C
• Diebond: soldered or glued
• Backside metallization: NiVsystem
• Frontside metallization: AlCusystem
部品番号
コンポーネント説明
PDF
メーカー
High-power MOS transistor, IGBT transistor gate driver chip
Jingjing Microelectronics Co., Ltd
Share Link: