Description
The IDT70P257/247 is a very low power 8K/4K x 16 Dual-Port Static RAM. The IDT70P257/247 is designed to be used as a stand-alone 128/64K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual Port SRAM for 32-bit-or-more word systems. Using the IDT MASTER/SLAVE Dual-Port SRAM approach in 32-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.
This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled byCE permits the on-chip circuitry of each port to enter a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 27mW of power.
The IDT70P257/247 is packaged in a 100 ball 0.5mm- pitch Ball Grid Array. The package is a 1mm thick and designed to fit in wireless handset applications.

FEATUREs
◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location
◆ High-speed access
   – Industrial: 55ns (max.)
◆ Low-power operation
   IDT70P257/247L
   Active: 27mW (typ.)
   Standby: 3.6µW (typ.)
◆ Separate upper-byte and lower-byte control for multiplexed bus compatibility
◆ IDT70P257/247 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than one device
◆ M/S = VDD for BUSY output flag on Master
  M/S = VSS for BUSY input on Slave
◆ Input Read Register
◆ Output Drive Register
◆ BUSY and Interrupt Flag
◆ On-chip port arbitration logic
◆ Full on-chip hardware support of semaphore signaling between ports
◆ Fully asynchronous operation from either port
◆ LVTTL-compatible, single 1.8V (±100mV) power supply
◆ Available in 100 Ball 0.5mm-pitch BGA
◆ Industrial temperature range (-40°C to +85°C)