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HY29F040A データシート - Hynix Semiconductor

HY29F040A image

部品番号
HY29F040A

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40 Pages

File Size
216.4 kB

メーカー
Hynix
Hynix Semiconductor Hynix

DESCRIPTION
The HY29F040A is a 4 Megabit, 5.0 volt-only CMOS Flash memory device organized as a 512K bytes of 8 bits each. The device is offered in standard 32-pin PDIP, 32-pin PLCC and 32-pin TSOP packages. It is designed to be programmed and erased in-system with a 5.0 volt power-supply and can also be reprogrammed in standard PROM programmers.


KEY FEATURES
• 5.0 V ± 10% Read, Program, and Erase
   - Minimizes system-level power requirements
• High performance
   - 55 ns access time
• Compatible with JEDEC-Standard Commands
   - Uses software commands, pinouts, and
      packages following industry standards for
      single power supply Flash memory
• Minimum 100,000 Program/Erase Cycles
• Sector Erase Architecture
   - Eight equal size sectors of 64K bytes each
   - Any combination of sectors can be erased
      concurrently; also supports full chip erase
• Erase Suspend/Resume
   - Suspend a sector erase operation to allow a
      data read or programming in a sector not
      being erased within the same device
• Internal Erase Algorithms
   - Automatically erases a sector, any combination
      of sectors, or the entire chip
• Internal Programming Algorithms
   - Automatically programs and verifies data at a
      specified address.
• Low Power Consumption
   - 40 mA maximum active read current
   - 60 mA maximum program/erase current
   - 5 mA maximum standby current
• Sector Protection
   - Hardware method disables any combination
      of sectors from a program or erase operation


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