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HY27UF081G データシート - Hynix Semiconductor

HY27L08F1G2M-FCB image

部品番号
HY27UF081G

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48 Pages

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474.6 kB

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Hynix
Hynix Semiconductor Hynix

SUMMARY DESCRIPTION

The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.

 

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部品番号
コンポーネント説明
PDF
メーカー
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Hynix Semiconductor
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Hynix Semiconductor
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Hynix Semiconductor
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Hynix Semiconductor
NAND Flash Memory
Micron Technology
NAND Flash Memory Controller
Oki Electric Industry
NAND Flash Memory Controller
Oki Electric Industry
4Gbit (512Mx8bit) NAND Flash Memory
Hynix Semiconductor
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory
Hynix Semiconductor
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory
Hynix Semiconductor

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