Description
The HWF1682RA is a high power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package.

FEATUREs
• High Output Power: P1dB=37 dBm (typ.)
• High Gain: GL=11.5 dB (typ.)
• High Efficiency: PAE =45% (typ.)
• High Linearity: IP3=48 dBm(typ.)
• Class A or Class AB Operation
• Low Cost