Description
HN58X24512I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).
It realizes high speed, low power consumption and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 128-
byte page programming function to make it’s write operation faster.
FEATUREs
• Single supply: 1.8 V to 5.5 V
• Two-wire serial interface (I2CTM serial bus*1)
• Clock frequency: 1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 2.5 V)
• Power dissipation:
Standby: 3 µA (max)
Active (Read): 2 mA (max)
Active (Write): 5 mA (max)
• Automatic page write: 128-byte/page
• Write cycle time: 10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 2.5 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years