Description
Renesas Technologys HN58V1001 is an electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.

FEATUREs
• Single 3 V supply: 2.7 V to 5.5 V
• Access time: 250 ns (max)
• Power dissipation
    - Active: 20 mW/MHz, (typ)
    - Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 15 ms (max)
• Automatic page write (128 bytes): 15 ms (max)
• Data polling and RDY/Busy
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 104 erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Write protection by RES pin
• There are also lead free products.