General Description
The HMC-ABH209 is a high dynamic range, two stage GaAs HEMT MMIC Medium Power Amplifi er which operates between 55 and 65 GHz. The HMC-ABH209 provides 13 dB of gain, and an output power of +16 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-ABH209 GaAs HEMT MMIC Medium Power Amplifi er is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

FEATUREs
   Output IP3: +25 dBm
   P1dB: +16 dBm
   Gain: 13 dB
   Supply Voltage: +5 V
   50 Ohm Matched Input/Output
   Die Size: 2.2 x 1.22 x 0.1 mm

Typical Applications
This HMC-ABH209 is ideal for:
• Short Haul / High Capacity Links
• Wireless LAN Bridges
• Military & Space