メーカー
Hitachi -> Renesas Electronics
Description
The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting.
FEATUREs
• Single 5 V supply: 5 V ± 10%
• Access time: 100/120 ns (max)
• Power dissipation:
Standby: 10 µW (typ)
Operation: 15 mW (typ) (f = 1 MHz)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output
Three state output
• Directly TTL compatible
All inputs and outputs
• Battery backup operation capability
• Operating temperature range: –40˚C to +85˚C
Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)
Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)
Renesas Electronics
64k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
Renesas Electronics
Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit)
Renesas Electronics
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)
Renesas Electronics