[Shenzhen H&M Semiconductor Co.Ltd]

Description
The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =30V,ID =100A
   RDS(ON) <2.5 mΩ @ VGS=10V
   RDS(ON) <3.5mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

APPLICATION
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply